Minghan Xu

Ph.D. Candidate, McGill University

Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate


Journal article


Yosuke Hanawa, Jianliang Zhang, Agus P. Sasmito, Minghan Xu, Saad Akhtar, Mohammaderfan Mohit, Junichi Yoshida, Koichi Sawada, Yuta Sasaki, Atsushi Sakuma
Langmuir, vol. 40, 2024, pp. 4033-4043


Cite

Cite

APA   Click to copy
Hanawa, Y., Zhang, J., Sasmito, A. P., Xu, M., Akhtar, S., Mohit, M., … Sakuma, A. (2024). Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate. Langmuir, 40, 4033–4043. https://doi.org/10.1021/acs.langmuir.3c02594


Chicago/Turabian   Click to copy
Hanawa, Yosuke, Jianliang Zhang, Agus P. Sasmito, Minghan Xu, Saad Akhtar, Mohammaderfan Mohit, Junichi Yoshida, Koichi Sawada, Yuta Sasaki, and Atsushi Sakuma. “Kinetics Formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate.” Langmuir 40 (2024): 4033–4043.


MLA   Click to copy
Hanawa, Yosuke, et al. “Kinetics Formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate.” Langmuir, vol. 40, 2024, pp. 4033–43, doi:10.1021/acs.langmuir.3c02594.


BibTeX   Click to copy

@article{hanawa2024a,
  title = {Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate},
  year = {2024},
  journal = {Langmuir},
  pages = {4033-4043},
  volume = {40},
  doi = {10.1021/acs.langmuir.3c02594},
  author = {Hanawa, Yosuke and Zhang, Jianliang and Sasmito, Agus P. and Xu, Minghan and Akhtar, Saad and Mohit, Mohammaderfan and Yoshida, Junichi and Sawada, Koichi and Sasaki, Yuta and Sakuma, Atsushi}
}